lh28f800bg-l Sharp Microelectronics of the Americas, lh28f800bg-l Datasheet - Page 5

• Manufacturer Part Number: lh28f800bg-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

1 INTRODUCTION
This datasheet contains LH28F800BG-L/BGH-L
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4 and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications. LH28F800BG-L/
BGH-L flash memories documentation also includes
ordering information which is referenced in
Section 7.
1.1 New Features
Key enhancements of LH28F800BG-L/BGH-L
SmartVoltage flash memories are :
Note following important differences :
1.2 Product Overview
The LH28F800BG-L/BGH-L are high-performance
8 M-bit SmartVoltage flash memories organized as
512 k-word of 16 bits. The 512 k-word of data is
arranged in two 4 k-word boot blocks, six 4 k-word
parameter blocks and fifteen 32 k-word main blocks
which are individually erasable in-system. The
memory map is shown in Fig. 1.
SmartVoltage technology provides a choice of V
and V
meet system performance and power expectations.
2.7 V V
power of 5 V V
approximately one-fourth the power of 5 V V
• SmartVoltage Technology
• Enhanced Suspend Capabilities
• Boot Block Architecture
• V
• To take advantage of SmartVoltage technology,
2.7 V, 3.3 V and 5 V block erase and word
write operations. Designs that switch V
during read operations should make sure that
the V
allow V
PPLK
PP
CC
PP
combinations, as shown in Table 1, to
has been lowered to 1.5 V to support
PP
consumes approximately one-fifth the
voltage transitions to GND.
connection to 2.7 V, 3.3 V or 5 V.
CC
and 3.3 V V
CC
consumes
PP
CC
off
CC
.
- 5 -
But, 5 V V
performance. V
eliminates the need for a separate 12 V converter,
while V
write performance. In addition to flexible erase and
program voltages, the dedicated V
complete data protection when V
Internal V
matically configures the device for optimized read
and write operations.
A Command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase and word write
operations.
A block erase operation erases one of the device’s
32 k-word blocks typically within 0.39 second (5 V
V
0.25 second (5 V V
other blocks. Each block can be independently
erased 100 000 times. Block erase suspend mode
allows system software to suspend block erase to
read data from, or write data to any other block.
Writing memory data is performed in word
increments of the device’s 32 k-word blocks
typically within 8.4 µs (5 V V
word blocks typically within 17 µs (5 V V
V
CC
PP
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
Table 1 V
). Word write suspend mode enables the
, 12 V V
V
PP =
CC
VOLTAGE
2.7 V
3.3 V
CC
5 V
Offered by SmartVoltage Technology
12 V maximizes block erase and word
PP
CC
and V
CC
), 4 k-word blocks typically within
PP
and V
provides the highest read
CC
at 2.7 V, 3.3 V and 5 V
PP
PP
, 12 V V
detection circuitry auto-
Voltage Combinations
2.7 V, 3.3 V, 5 V, 12 V
CC
3.3 V, 5 V, 12 V
V
PP
PP
PP
, 12 V V
5 V, 12 V
) independent of
≤ V
VOLTAGE
PP
PPLK
pin gives
PP
CC
.
), 4 k-
, 12 V