lh28f800bg-l Sharp Microelectronics of the Americas, lh28f800bg-l Datasheet - Page 32

• Manufacturer Part Number: lh28f800bg-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (contd.)
NOTES :
1. Read timing characteristics during block erase and word
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
QVSL
CC
write operations are the same as during read-only
operations. Refer to Section 6.2.4 "AC CHARAC-
TERISTICS" for read-only operations.
word write.
should be held at V
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
PP
= 5.0±0.25 V, 5.0±0.5 V, T
should be held at V
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RY/BY# High
RP# V
RY/BY# High
WP# V
RY/BY# High
PP
PP
VERSIONS
Setup to WE# Going High
Hold from Valid SRD,
HH
IH
HH
IH
Setup to WE# Going High
Setup to WE# Going High
PARAMETER
Hold from Valid SRD,
Hold from Valid SRD,
HH
) until determination of block erase
PPH1/2/3
IN
and D
A
(and if necessary RP#
= 0 to +70˚C or –40 to +85
IN
for block erase or
V
V
CC
CC
±0.25 V
±0.5 V
NOTE
2, 4
2, 4
2, 4
2
2
2
3
2
3
LH28F800BGH-L85
LH28F800BG-L85
(NOTE 5)
MIN.
100
100
100
85
10
40
40
40
10
30
- 32 -
1
5
5
0
0
0
0
5. See Fig. 8 "Transient Input/Output Reference
6. See Fig. 9 "Transient Input/Output Reference
MAX.
˚
90
C
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
Waveform" and Fig. 10 "Transient Equivalent Testing
Load Circuit" (High Seed Configuration) for testing
characteristics.
Waveform" and Fig. 10 "Transient Equivalent Testing
Load Circuit" (Standard Configuration) for testing
characteristics.
LH28F800BGH-L85
LH28F800BG-L85
(NOTE 6)
MIN.
100
100
100
90
10
40
40
40
10
30
1
5
5
0
0
0
0
(NOTE 1)
MAX.
90
LH28F800BGH-L12
LH28F800BG-L12
(NOTE 6)
MIN.
120
100
100
100
10
40
40
40
10
30
1
5
5
0
0
0
0
MAX.
90
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns