lh28f800bg-l Sharp Microelectronics of the Americas, lh28f800bg-l Datasheet - Page 39

• Manufacturer Part Number: lh28f800bg-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.8 BLOCK ERASE AND WORD WRITE PERFORMANCE
NOTES :
1. Typical values measured at T
2. Excludes system-level overhead.
SYMBOL
SYMBOL
• V
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV2
EHQV2
WHRH1
EHRH1
WHRH2
EHRH2
WHQV1
EHQV1
WHQV2
EHQV2
WHRH1
EHRH1
WHRH2
EHRH2
CC
CC
voltages. Subject to change based on device
characterization.
= 2.7 to 3.6 V, T
= 3.3±0.3 V, T
Word Write Block
Time
Block Write Block
Time
Block Erase Block
Time
Word Write Suspend
Latency Time to Read
Erase Suspend Latency
Time to Read
Word Write Block
Time
Block Write Block
Time
Block Erase Block
Time
Word Write Suspend
Latency Time to Read
Erase Suspend Latency
Time to Read
PARAMETER
PARAMETER
A
32 k-Word
4 k-Word
Block
32 k-Word
4 k-Word
Block
32 k-Word
4 k-Word
Block
= 0 to +70˚C or –40 to +85
32 k-Word
4 k-Word
Block
32 k-Word
4 k-Word
Block
32 k-Word
4 k-Word
Block
A
= 0 to +70˚C or –40 to +85
A
NOTE
NOTE
= +25˚C and nominal
2
2
2
2
2
2
2
2
2
2
2
2
MIN. TYP.
MIN. TYP.
V
V
PP
PP
= 2.7 to 3.6 V
= 3.3±0.3 V
44.6
45.9
1.46
0.19
1.14
0.38
1.44
0.19
1.11
0.37
16.2
˚
18
44
45
C
(NOTE 1)
(NOTE 1)
7
6
˚
C
- 39 -
MAX.
MAX.
22
20
8
7
3. These performance numbers are valid for all speed
4. Sampled, not 100% tested.
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
versions.
MIN. TYP.
MIN. TYP.
V
V
PP
PP
= 5.0±0.5 V
= 5.0±0.5 V
(NOTE 3, 4)
17.7
26.1
0.58
0.11
0.61
0.32
17.3
25.6
0.57
0.11
0.59
0.31
9.6
11
(NOTE 1)
6
(NOTE 1)
5
MAX.
MAX.
14
12
8
7
MIN. TYP.
MIN. TYP.
V
V
PP
PP
= 12.0±0.6 V
= 12.0±0.6 V
12.6
24.5
0.42
0.11
0.51
0.31
12.3
0.41
0.1
0.5
0.3
9.6
11
24
(NOTE 1)
6
(NOTE 1)
5
MAX.
MAX.
14
12
7
6
UNIT
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
s
s