lh28f800bg-l Sharp Microelectronics of the Americas, lh28f800bg-l Datasheet - Page 31

• Manufacturer Part Number: lh28f800bg-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (contd.)
NOTES :
1. Read timing characteristics during block erase and word
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
QVSL
CC
write operations are the same as during read-only
operations. Refer to Section 6.2.4 "AC CHARAC-
TERISTICS" for read-only operations.
word write.
= 3.3±0.3 V, T
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
WP# V
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
IH
IH
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
A
= 0 to +70˚C or –40 to +85
PARAMETER
VERSIONS
IN
and D
IN
for block erase or
˚
C
- 31 -
NOTE
2, 4
2, 4
2, 4
2
2
2
2
3
3
4. V
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
should be held at V
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
LH28F800BGH-L85
PP
LH28F800BG-L85
MIN.
100
100
100
100
10
50
50
50
10
30
should be held at V
1
5
5
0
0
0
0
(NOTE 1)
MAX.
100
HH
) until determination of block erase
PPH1/2/3
LH28F800BGH-L12 UNIT
LH28F800BG-L12
MIN.
130
100
100
100
10
50
50
50
10
30
1
5
5
0
0
0
0
(and if necessary RP#
MAX.
100
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns