BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 8

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07451
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I
S
10
9
8
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
GS
= 0 V
GS
150ºC
= 0 V
T
j
= 25ºC
V
03ad16
SD
(V)
Rev. 01 — 06 September 2000
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 2.3 A; V
charge; typical values.
V
(V)
GS
10
9
8
7
6
5
4
3
2
1
0
0
DS
I
T
V
D
j
DS
= 2.3A
= 25ºC
= 15 V
= 15 V
1
2
3
4
© Philips Electronics N.V. 2000. All rights reserved.
5
BSH120T
6
03ad18
Q
7
G
(nC)
8
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