BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 6

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07451
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
R
( )
DSon
(A)
I
D
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
9
8
7
6
5
4
3
2
1
0
1
0
0
0
VGS=20V
1
3V
3.2V
2
0.5
3.4V
3
10V
3.6V
4
1
5V
3.8V
5
6
4.6V
4V
1.5
7
4.2V
T
8
V
V
j
03ad12
DS
GS
= 25ºC
4.4V
4.2V
3.8V
3.6V
3.4V
3.2V
I
(V)
D
4V
3V
03ad13
4.4V
= 10V
4.6V
9 10
(A)
Rev. 01 — 06 September 2000
2
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
a
j
a
= 25 C and 150 C; V
=
function of gate-source voltage; typical values.
factor as a function of junction temperature.
1.6
1.4
1.2
0.6
0.4
0.2
1.8
1.0
0.8
2.0
--------------------------- -
R
(A)
I
D
0
DSon 25 C
-60
R
10
DSon
9
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
DS
-20
> I
D
X R
DSon
20
DS
T
j
= 25ºC
I
60
D
© Philips Electronics N.V. 2000. All rights reserved.
R
DSon
100
150ºC
BSH120T
T j ( o C)
V
03ad14
GS
140
(V)
03aa27
180
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