BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 3

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07451
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; drain and peak drain currents as a function of drain-source voltage.
T
P
amb
der
function of ambient temperature.
P der
(%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
is single pulse.
100%
(A)
10 -2
50
I
10 -1
10
D
1
10 -1
75
P
R
100
DSon
t p
= V
T
125
DS
/ I
T amb ( o C)
=
D
t p
T
150
t
03aa11
Rev. 01 — 06 September 2000
175
1
D.C.
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
I
V
der
GS
function of ambient temperature.
=
I
der
(%)
4.5 V
10
------------------ -
I
D 25 C
120
100
I
80
60
40
20
D
0
0
100%
25
V
t p = 100 µs
1 ms
10 ms
100 ms
DS
50
(V)
75
03ac50
© Philips Electronics N.V. 2000. All rights reserved.
10 2
100
125
BSH120T
T amb (
150
03aa19
o
C)
175
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