BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 4

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BSH120T-01

Manufacturer Part Number
BSH120T-01
Description
Bsh120t N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07451
Product specification
Symbol Parameter
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
T
amb
(K/W)
Z
duration.
th(j-a)
= 25 C
10 -1
10 -2
10 3
10 2
10
1
10 -5
0.2
0.1
0.05
0.02
= 0.5
Rev. 01 — 06 September 2000
10 -4
single pulse
Conditions
vertical in still air; lead length
N-channel enhancement mode field-effect transistor
10 -3
10 -2
10 -1
4 mm;
1
© Philips Electronics N.V. 2000. All rights reserved.
Figure 4
P
t p
BSH120T
10
T
t
p
=
(s)
03ac49
t p
T
t
Value Unit
150
10 2
4 of 13
K/W

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