BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 2

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07451
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
T
T
T
Rev. 01 — 06 September 2000
j
amb
amb
GS
GS
j
j
amb
amb
amb
amb
amb
amb
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 10 V; I
= 4.5 V; I
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; t
D
D
Figure 1
N-channel enhancement mode field-effect transistor
= 2.2 A
p
= 1 A
GS
GS
GS
10 s
= 10 V
= 10 V;
GS
= 10 V;
p
= 20 k
10 s;
Figure 2
Figure 2
Figure 3
and
3
© Philips Electronics N.V. 2000. All rights reserved.
Typ
80
120
Min
65
65
BSH120T
100
200
Max
30
2.2
0.83
150
Max
30
30
2.2
1.4
9
0.83
+150
+150
0.7
9
20
2 of 13
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
W
A
A
C
C
C