BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet
BSH120T-01
Related parts for BSH120T-01
BSH120T-01 Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH120T in SOT54 (TO-92). 2. Features TrenchMOS™ technology Low on-state resistance Very fast switching Logic level compatible. 3. Applications Relay drivers ...
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... 100 Figure 2 amb pulsed Figure 3 amb Figure 1 amb = 25 C amb = amb p Rev. 01 — 06 September 2000 BSH120T Typ Max Unit 30 V 2.2 A 0.83 W 150 C 80 100 m 120 200 m Min Max Unit ...
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... T amb ( 4 der Fig 2. Normalized continuous drain current as a function of ambient temperature D. Rev. 01 — 06 September 2000 BSH120T 03aa19 120 100 100 125 150 o T amb ( ------------------ - 100 03ac50 100 µ ...
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... Z th(j-a) (K/ 0.5 0.2 0.1 10 0.05 0. single pulse amb duration. Rev. 01 — 06 September 2000 BSH120T 4 mm; Figure 4 03ac49 (s) p © Philips Electronics N.V. 2000. All rights reserved. Value Unit 150 K ...
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... MHz; Figure 1. Figure 1. /dt = 100 Rev. 01 — 06 September 2000 BSH120T Min Typ Max Unit 2.8 V 0 100 nA 0 100 nA ...
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... V = 10V ( --------------------------- - R Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 06 September 2000 BSH120T 03ad14 10 V > DSon 150º 25º 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 ...
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... C iss , C oss C rss (pF ( MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 06 September 2000 BSH120T 03aa37 ( min typ 0 ...
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... ( 25º ( 2 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 06 September 2000 BSH120T 03ad18 25º (nC © Philips Electronics N.V. 2000. All rights reserved. ...
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... Product specification N-channel enhancement mode field-effect transistor 2 scale 4.8 1.7 4.2 14.5 2.54 1.27 4.4 1.4 3.6 12.7 REFERENCES JEDEC EIAJ TO-92 SC-43 Rev. 01 — 06 September 2000 BSH120T ( 2.5 EUROPEAN ISSUE DATE PROJECTION 97-02-28 © Philips Electronics N.V. 2000. All rights reserved. SOT54 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000906 - Product specification; initial version. 9397 750 07451 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 BSH120T © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 06 September 2000 BSH120T Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 06 September 2000 BSH120T © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 06 September 2000 Document order number: 9397 750 07451 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSH120T ...