BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 7

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07451
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
(S)
g
(V)
fs
7
6
5
4
3
2
1
0
2.5
1.5
0.5
3
2
1
0
0
-60
DS
V
DS
1
= V
> I
-20
D
2
GS
X R
3
DSon
DS
20
4
min
typ
I
D
5
T
60
j
= 25ºC
150ºC
R
6
DSon
100
7
8
T j ( o C)
140
I
D
03ad15
9 10
(A)
03aa34
Rev. 01 — 06 September 2000
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
C iss , C oss
C rss (pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
0
10 3
10 2
10
DS
10 -1
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
C iss
C oss
C rss
BSH120T
typ
V DS (V)
V GS (V)
2.5
03aa37
03ad17
10 2
3
7 of 13