BSH120T-01 NXP Semiconductors, BSH120T-01 Datasheet - Page 5

• Manufacturer Part Number: BSH120T-01
• Description: Bsh120t N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07451
Product specification
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
g(tot)
gs
gd
iss
oss
rss
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
V
Rev. 01 — 06 September 2000
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 1.25 A; V
= 1.25 A; dI
= 10 A; V
= 1 mA; V
= 2.3 A; V
j
j
j
j
j
j
j
j
j
= 24 V; V
= 20 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 20 V; V
= 10 V; I
= 25 C
= 150 C
= 4.5 V; I
= 0 V; V
= 20 V; R
= 0 V; V
DS
DS
DS
DS
D
D
GS
D
GS
GS
D
S
N-channel enhancement mode field-effect transistor
= 2.2 A;
= 2.2 A;
DS
/dt = 100 A/ s;
= V
= 1 A;
= 15 V; V
= 20 V; f = 1 MHz;
= 30 V
= 18 ; V
= 0 V
= 0 V;
= 0 V
= 0 V
GS
;
Figure 7
Figure 9
Figure 11
Figure 13
Figure 7
GS
GS
= 10 V;
= 10 V; R
and
and
Figure 12
8
Figure 14
8
G
= 6
© Philips Electronics N.V. 2000. All rights reserved.
Min
30
27
1
0.6
2
BSH120T
Typ
45
2
10
0.6
10
80
120
4
6.6
1
2.1
250
88
54
2.2
12.3
40
31
0.82
69
55
Max
2.8
3.2
100
10
100
100
170
200
1.2
5 of 13
Unit
V
V
V
V
V
nA
nA
m
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A