CY8C3446LTI-085ES2 Cypress Semiconductor Corp, CY8C3446LTI-085ES2 Datasheet - Page 103

• Manufacturer Part Number: CY8C3446LTI-085ES2
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C3446LTI-085ES2

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 11-55. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-56. NVL DC Specifications
Table 11-57. NVL AC Specifications
11.7.4 SRAM
Table 11-58. SRAM DC Specifications
Table 11-59. SRAM AC Specifications
Document Number: 001-53304 Rev. *L
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp.
T
cycles
V
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
A
DDD
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
≤ 25 °C,
≤ 55 °C,
PSoC
1.71
Min
Min
Min
Min
Min
100
DC
1.2
1K
20
20
10
20
20
–
®
3: CY8C34 Family
Typ
Typ
Typ
Typ
Typ
2
–
–
–
–
–
–
–
–
–
–
50.01
Data Sheet
Max
Max
Max
Max
Max
5.5
20
–
–
–
–
–
–
–
–
Page 103 of 127
program/
program/
cycles
cycles
Units
years
Units
Units
erase
erase
years
years
Units
Units
MHz
ms
V
V