MT46V8M16TG-75Z Micron Technology Inc, MT46V8M16TG-75Z Datasheet - Page 74

MT46V8M16TG-75Z

Manufacturer Part Number
MT46V8M16TG-75Z
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V8M16TG-75Z

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Figure 47:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
COMMAND
ADDRESS
BA0, BA1
DQ 5
DQS
CK#
CKE
A10
DM
CK
t
t
WRITE – DM Operation
IS
IS
NOP
T0
t
1
IH
t
IH
Notes:
t
Bank x
t
IS
IS
Row
ACT
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 48 on page 75 for detailed DQ timing.
t
t
IH
IH
times.
t
CK
t
t
RCD
RAS
NOP
T2
1
t
CH
t
CL
WRITE
Bank x
t
3
IS
Col n
T3
t
t
DQSS (NOM)
2
IH
t
WPRES
74
t
DS
t
WPRE
NOP
T4
DI
b
1
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
128Mb: x4, x8, x16 DDR SDRAM
t
DQSH
1
T5n
t
WPST
DON’T CARE
NOP
T6
1
©2004 Micron Technology, Inc. All rights reserved.
t WR
NOP
T7
TRANSITIONING DATA
1
Operations
ALL BANKS
ONE BANK
Bank x
T8
PRE
4
t RP

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