MT46V8M16TG-75Z Micron Technology Inc, MT46V8M16TG-75Z Datasheet - Page 23

MT46V8M16TG-75Z

Manufacturer Part Number
MT46V8M16TG-75Z
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V8M16TG-75Z

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Table 19:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
AC Characteristics
Parameter
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
Terminating voltage delay to V
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-
READ command
Exit SELF REFRESH-to-READ command
Data valid output window (DVW)
Electrical Characteristics and Recommended AC Operating Conditions (-6, -6T, -75E)
(continued)
Notes: 1–6, 15–18, 34 apply to entire table; Notes appear on pages 26–32;
Notes:
1. -6 (FBGA) available in 256Mb and 512Mb densities only.
128Mb, 256Mb, 512Mb
1Gb
SS
Symbol
t
t
WPRES
t
t
t
t
t
WPRE
t
WPST
t
t
XSNR
XSNR
XSRD
RPST
t
WTR
RRD
VTD
n/a
WR
23
t
Min
-6 (FBGA)
0.25
QH -
200
0.4
0.4
12
15
75
0
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
Electrical Specifications – DC and AC
DQSQ
Max
0.6
0.6
1
128Mb: x4, x8, x16 DDR SDRAM
t
Min
0.25
-6T (TSOP)
126
200
QH -
0.4
0.4
12
15
75
0
0
1
t
DQSQ
Max
0.6
0.6
t
Min
©2004 Micron Technology, Inc. All rights reserved.
0.25
QH -
200
0.4
0.4
15
15
75
0
0
1
-75E
t
DQSQ
Max
0.6
0.6
Units Notes
t
t
t
t
t
CK
ns
ns
CK
ns
CK
ns
CK
ns
ns
CK
ns
21, 22
44
20
26

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