N25Q128A13ESF40F NUMONYX, N25Q128A13ESF40F Datasheet - Page 98
N25Q128A13ESF40F
Manufacturer Part Number
N25Q128A13ESF40F
Description
NUMN25Q128A13ESF40F 128MB SPI FLASH MEMO
Manufacturer
NUMONYX
Datasheet
1.N25Q128A13BSF40G.pdf
(180 pages)
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Figure 27. Subsector Erase instruction sequence
Sector Erase (SE)
The Sector Erase (SE) instruction sets to '1' (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (DQ0). Any address inside
the sector is a valid address for the Sector Erase (SE) instruction. Chip Select (S) must be
driven Low for the entire duration of the sequence.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect
(BP3, BP2, BP1, BP0 and TB) bits is not executed.
A Sector Erase cycle can be paused by mean of Program/Erase Suspend (PES) instruction
and resumed by mean of Program/Erase Resume (PER) instruction.
S
C
DQ0
0
1
2
Instruction
3
4
5
6
7
MSB
23 22
8
9
24 Bit Address
2
29 30 31
1
0
Subsector_Erase