N25Q128A13ESF40F NUMONYX, N25Q128A13ESF40F Datasheet - Page 77

• Manufacturer Part Number: N25Q128A13ESF40F
• Description: NUMN25Q128A13ESF40F 128MB SPI FLASH MEMO
• Manufacturer: NUMONYX

Note:
In the case of a Page Program (PP), Program OTP (POTP), Dual Input Fast Program
(DIFP), Dual Input Extended Fast Program (DIEFP), Quad Input Fast Program (QIFP),
Quad Input Extended Fast Program (QIEFP), Subsector Erase (SSE), Sector Erase (SE),
Bulk Erase (BE), Write Status Register (WRSR), Clear Flag Status Register (CLFSR), Write
to Lock Register (WRLR), Write Configuration Register (WRVCR), Write Enhanced
Configuration Register (WRVECR), Write NV Configuration Register (WRNVCR), Write
Enable (WREN) or Write Disable (WRDI) instruction, Chip Select (S) must be driven High
exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That
is, Chip Select (S) must driven High when the number of clock pulses after Chip Select (S)
being driven Low is an exact multiple of eight.
All attempts to access the memory array are ignored during:
The following continue unaffected, with one exception:
The only exception is the Program/Erase Suspend instruction (PES), that can be used to
pause all the program and the erase cycles except for:
The suspended program or erase cycle can be resumed by the Program/Erase Resume
instruction (PER). During the program/erase cycles, the polling instructions (both on the
Status register and on the Flag Status register) are also accepted to allow the application to
check the end of the internal modify cycles.
These polling instructions don't affect the internal cycles performing.
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Write Status Register cycle
Write Non Volatile Configuration Register
Program cycle
Erase cycle
Internal Write Status Register cycle,
Write Non Volatile Configuration Register,
Program cycle,
Erase cycle
Program OTP (POTP),
Bulk Erase,
Write Non Volatile Configuration Register.
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