MT48H8M32LFB5-75 L:G Micron Technology Inc, MT48H8M32LFB5-75 L:G Datasheet - Page 81

• Manufacturer Part Number: MT48H8M32LFB5-75 L:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 L:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Deep Power-Down
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Deep Power-Down