MT48H8M32LFB5-75 L:G Micron Technology Inc, MT48H8M32LFB5-75 L:G Datasheet - Page 73

• Manufacturer Part Number: MT48H8M32LFB5-75 L:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 L:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Command
Figure 44: WRITE Without Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank
ACTIVE
Row
Row
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
Disable auto precharge
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
t CMS
t CL
Column m
t DS
WRITE
Bank
T2
D
IN
t CMH
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
T4
NOP
D
IN
t DH
73
t DS
NOP
T5
D
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR
NOP
T6
PRECHARGE
Single bank
All banks
PRECHARGE Operation
Bank
T7
©2008 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care