MT48H8M32LFB5-75 L:G Micron Technology Inc, MT48H8M32LFB5-75 L:G Datasheet - Page 61

• Manufacturer Part Number: MT48H8M32LFB5-75 L:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 L:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 32: Alternating Bank Write Accesses
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
T1
Note:
NOP
Enable auto precharge
t CMS
t CL
1. For this example, BL = 4.
Column m
t DS
Bank 0
WRITE
T2
D
t CMH
IN
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
Bank 1
ACTIVE
Row
T4
Row
D
IN
t DH
61
t RCD - bank 1
t DS
T5
D
NOP
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
D
IN
t DH
t DS
T7
NOP
D
IN
t DH
t RP - bank 0
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WRITE Operation
t DS
T8
NOP
D
IN
t DH
t DS
Bank 0
Row
Row
T9
ACTIVE
D
t RCD - bank 0
t WR - bank 1
IN
t DH
Don’t Care