MT41J64M16LA-15E IT:B Micron Technology Inc, MT41J64M16LA-15E IT:B Datasheet - Page 46
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MT41J64M16LA-15E IT:B
Manufacturer Part Number
MT41J64M16LA-15E IT:B
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J64M16LA-15E_ITB.pdf
(208 pages)
Specifications of MT41J64M16LA-15E IT:B
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
-40C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Electrical Specifications – DC and AC
DC Operating Conditions
Table 21: DC Electrical Characteristics and Operating Conditions
All voltages are referenced to V
Input Operating Conditions
Table 22: DC Electrical Characteristics and Input Conditions
All voltages are referenced to V
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
V
V
(All other pins not under test = 0V)
Parameter/Condition
V
V
Input reference voltage command/address bus
I/O reference voltage DQ bus
I/O reference voltage DQ bus in SELF REFRESH
Command/address termination voltage
(system level, not direct DRAM input)
REF
REFDQ
IN
IN
low; DC/commands/address busses
high; DC/commands/address busses
supply leakage current
= V
DD
/2 or V
IN
≤ V
REFCA
Notes:
Notes:
DD
= V
, V
REF
DD
/2
1. V
2. V
3. V
4. The minimum limit requirement is for testing purposes. The leakage current on the V
1. V
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
3. V
pin 0V ≤ V
SS
SS
V
DC (0 Hz to 250 kHz) specifications. V
timing parameters.
pin should be minimal.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
ceed ±2% of V
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
exceed ±2% of V
DD
SSQ
DD
REF
REFCA(DC)
REFDQ(DC)
and V
.
and V
(see Table 22).
IN
DD
DD
≤ 1.1V
is expected to be approximately 0.5 × V
DDQ
DDQ
is expected to be approximately 0.5 × V
around the V
around the V
must track one another. V
may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
REFCA(DC)
REFDQ(DC)
V
V
V
Symbol
REFDQ(DC)
REFCA(DC)
REFDQ(sr)
Symbol
V
V
V
V
I
V
TT
VREF
IH
IL
.
DDQ
DD
I
I
REFCA(DC)
REFDQ(DC)
.
46
See Table 23
0.49 × V
0.49 × V
value. Peak-to-peak AC noise on V
value. Peak-to-peak AC noise on V
1.425
1.425
Min
Electrical Specifications – DC and AC
Min
V
V
–2
–1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
SS
SS
DD
DD
DD
and V
DDQ
1Gb: x4, x8, x16 DDR3 SDRAM
must be less than or equal to V
0.5 × V
DDQ
0.5 × V
0.5 × V
0.5 × V
Nom
Nom
1.5
1.5
n/a
n/a
–
–
DD
DD
must be at same level for valid AC
DDQ
and to track variations in the DC
and to track variations in the DC
DD
DD
DD
See Table 23
0.51 × V
0.51 × V
© 2006 Micron Technology, Inc. All rights reserved.
1.575
1.575
Max
Max
V
V
2
1
DD
DD
–
REFCA
REFDQ
DD
DD
REFCA
REFDQ
may not exceed
may not exceed
Units
should not ex-
Units Notes
should not
µA
µA
V
V
V
V
V
V
V
V
DD
. V
SS
Notes
1, 2
1, 2
1, 2
2, 3
=
4
4
5
REF
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