MT49H64M9CHT-25:A Micron Technology Inc, MT49H64M9CHT-25:A Datasheet - Page 55

• Manufacturer Part Number: MT49H64M9CHT-25:A
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H64M9CHT-25:A

• Organization: 64Mx9
• Address Bus: 25b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 675mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 32:
Figure 33:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
576Mb_RLDRAM_II_SIO_Core2.fm - Rev. F 6/09 EN
COMMAND
D and DM ODT
ADDRESS
COMMAND
Q ODT
ADDRESS
QVLD
Q ODT
QVLD
QK#
CK#
QK#
QK
DK#
CK#
DM
QK
CK
DK
Q
CK
D
Q
Bank a,
Add n
READ
T0
READ-NOP-READ with ODT
READ-to-WRITE with ODT
Bank a,
READ
Col n
T0
Notes:
Notes:
Bank b,
WRITE
Add n
T1
1. DO an (or bn) = data-out from bank a (or bank b) and address n.
2. BL = 2.
3. One subsequent element of the burst appears after DO an and DO bn.
4. Nominal conditions are assumed for specifications not defined.
1. DO an = data-out from bank a and address n; DI bn = data-in for bank b and address n.
2. BL = 4.
3. Three subsequent elements of each burst appear after each DO an and DI bn.
4. Nominal conditions are assumed for specifications not defined.
NOP
T1
RL = 4
Q ODT on
t
RC = RL = 4
Q ODT on
NOP
T2
Bank b,
WL = RL + 1 = 5
READ
Col n
576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II
T2
NOP
T3
NOP
T3
55
Bank a,
READ
Add n
T4
DO
an
T4n
T4
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
an
D and DM ODT on
Q ODT off
Q ODT off
NOP
T5
T4n
T5n
T5
NOP
Q ODT on
NOP
T6
DI
bn
TRANSITIONING DATA
T6n
T6
NOP
©2004 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
DO
bn
Q ODT on
NOP
T7
Q ODT off
T6n
T7n
T7
NOP
Operations
NOP
NOP
T8
DON’T CARE
Q ODT on
DO
an
DON’T CARE
Q ODT off
T8n
NOP