MT49H64M9CHT-25:A Micron Technology Inc, MT49H64M9CHT-25:A Datasheet - Page 29

• Manufacturer Part Number: MT49H64M9CHT-25:A
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H64M9CHT-25:A

• Organization: 64Mx9
• Address Bus: 25b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 675mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Temperature and Thermal Impedance
Table 14:
Table 15:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
576Mb_RLDRAM_II_SIO_Core2.fm - Rev. F 6/09 EN
Parameter
Storage temperature
Reliability junction temperature
Operating junction temperature
Operating case temperature
Package
µBGA
FBGA
Temperature Limits
Thermal Impedance
Substrate
2-layer
4-layer
2-layer
4-layer
Notes:
Notes:
It is imperative that the RLDRAM device’s temperature specifications, shown in Table 14,
be maintained in order to ensure the junction temperature is in the proper operating
range to meet data sheet specifications. An important step in maintaining the proper
junction temperature is using the device’s thermal impedances correctly. The thermal
impedances are listed for the packages available.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note
listed in Table 14. For designs that are expected to last several years and require the flexi-
bility to use several DRAM die shrinks, consider using final target theta values (rather
than existing values) to account for increased thermal impedances from the die size
reduction.
The RLDRAM device’s safe junction temperature range can be maintained when the T
specification is not exceeded. In applications where the device’s ambient temperature is
too high, use of forced air and/or heat sinks may be required in order to satisfy the case
temperature specifications.
1. MAX storage case temperature; T
2. Temperatures greater than 110°C may cause permanent damage to the device. This is a
3. Junction temperature depends upon package type, cycle time, loading, ambient tempera-
4. MAX operating case temperature; T
5. Device functionality is not guaranteed if the device exceeds maximum T
6. Both temperature specifications must be satisfied.
1. Thermal impedance data is based on a number of samples from multiple lots and should be
Figure 9 on page 30. This case temperature limit is allowed to be exceeded briefly during
package reflow, as noted in Micron technical note TN-00-15.
stress rating only and functional operation of the device at or above this is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability
of the part.
ture, and airflow.
Figure 9 on page 30.
viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
Commercial
Industrial
Commercial
Industrial
Commercial
Industrial
45.4
30.2
43.8
31.3
TN-00-08, “Thermal Applications,”
576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II
Airflow = 1m/s
Symbol
θ JA (°C/W)
T
T
STG
T
T
C
J
J
31.5
23.2
31.2
24.3
29
STG
C
is measured in the center of the package, as shown in
is measured in the center of the package, as shown in
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Temperature and Thermal Impedance
Min
–55
–40
–40
–
–
0
0
Airflow = 2m/s
prior to using the thermal impedances
θ JA (°C/W)
26.3
21.1
26.9
21.9
Max
+150
+110
+110
+100
+100
+95
+95
©2004 Micron Technology, Inc. All rights reserved.
θ JB (°C/W)
15.1
14.3
16.7
16.5
Units
°C
°C
°C
°C
°C
°C
°C
C
during operation.
θ JC (°C/W)
Notes
4, 5, 6
1.5
2.2
4, 5
1
2
2
3
3
C