MT4LSDT864AY-13EG2 Micron Technology Inc, MT4LSDT864AY-13EG2 Datasheet - Page 18

• Manufacturer Part Number: MT4LSDT864AY-13EG2
• Description: MODULE SDRAM 64MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT864AY-13EG2

• Memory Type: SDRAM
• Memory Size: 64MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 8Mx64
• Total Density: 64MByte
• Chip Density: 128Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 660mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Table 14:
Table 15:
Table 16:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
device banks active after
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
Auto refresh current: CS# = HIGH;
CKE = HIGH
Self refresh current: CKE ≤ 0.2V
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
device banks active after
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
Auto refresh current: CS# = HIGH;
CKE = HIGH
Self refresh current: CKE ≤ 0.2V
Parameter/Condition
Operating current: Active mode; burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
device banks active after
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
DD
RC =
RC =
RC =
Specifications
t
t
t
RC (MIN)
RC (MIN)
RC (MIN)
I
Notes: 1, 5, 6, 11, 13; notes appear on page 20; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 20; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 20; V
DD
DD
DD
Specifications and Conditions – 32MB
Specifications and Conditions – 64MB
Specifications and Conditions – 128MB
t
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
RCD met; No accesses in progress
t
t
t
t
RFC =
RFC = 15.62µs
RFC =
RFC = 15.62µs
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
t
t
RFC (MIN)
RFC (MIN)
18
DD
DD
DD
Symbol
Symbol
, V
, V
, V
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
1
2
3
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +3.3V ±0.3V; DRAM components only
Q = +3.3V ±0.3V; DRAM components only
Q = +3.3V ±0.3V; DRAM components only
1
2
3
4
5
6
7
1,320 1,240 1,080
-13E
-13E
-13E
640
200
660
540
160
540
500
180
600
920
12
12
8
8
8
8
4
Max
Max
-133
-133
Max
-133
600
200
600
500
160
540
460
180
560
840
12
12
8
8
8
8
4
Electrical Specifications
-10E
-10E
-10E
560
160
560
500
160
540
380
140
480
760
12
12
8
8
8
8
4
©2002 Micron Technology, Inc. All rights reserved.
Units
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3, 18, 19, 29
3, 12, 19, 29
3, 18, 19, 29
3, 18, 19, 29
3, 12, 19, 29
3, 18, 19, 29
19, 29, 30
19, 29, 30
3, 12, 18,
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
Notes
Notes
Notes
29
29
29
29
29
29
4
4