MT4LSDT864AY-13EG2 Micron Technology Inc, MT4LSDT864AY-13EG2 Datasheet - Page 16

• Manufacturer Part Number: MT4LSDT864AY-13EG2
• Description: MODULE SDRAM 64MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT864AY-13EG2

• Memory Type: SDRAM
• Memory Size: 64MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 8Mx64
• Total Density: 64MByte
• Chip Density: 128Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 660mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
Table 12:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Parameter
Data-out to high-impedance from PRECHARGE
command
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time CL = 3
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (8,192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
AC Functional Characteristics (Continued)
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 20
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 20; V
CL = 3
CL = 2
CL = 3
CL = 2
CL = 2
Symbol
t
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
t
CMH
t
t
t
OH
t
t
CKH
CMS
t
RCD
RRD
t
t
RAS
t
t
CKS
RFC
t
XSR
t
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
N
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
1 CLK +
Min
7ns
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
–
–
7
–
–
1
3
–
-13E
CL = 3
CL = 2
16
120,000
Max
5.4
5.4
5.4
5.4
1.2
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DD
, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
DD
t
t
1 CLK +
ROH(3)
ROH(2)
7.5ns
Min
Q = +3.3V ±0.3V
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
44
66
20
66
20
15
15
75
–
–
–
–
1
3
–
-133
120,000
Max
-13E
5.4
5.4
1.2
64
6
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
2
Electrical Specifications
1 CLK +
-133
Min
7ns
1.8
0.3
3
2
10
50
70
20
70
20
20
15
80
1
2
3
3
8
1
2
1
2
1
2
1
3
–
–
–
–
–
©2002 Micron Technology, Inc. All rights reserved.
-10E
-10E
120,000
Max
3
2
1.2
64
–
6
–
–
–
–
–
–
–
–
–
–
–
–
6
6
–
–
–
–
–
–
–
–
–
–
–
Units
t
t
Units Notes
CK
CK
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
17
17
27
23
23
10
10
28
32
24
25
20
7