MT4LSDT864AY-13EG2 Micron Technology Inc, MT4LSDT864AY-13EG2 Datasheet - Page 15

• Manufacturer Part Number: MT4LSDT864AY-13EG2
• Description: MODULE SDRAM 64MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT864AY-13EG2

• Memory Type: SDRAM
• Memory Size: 64MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 8Mx64
• Total Density: 64MByte
• Chip Density: 128Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 660mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Absolute Maximum Ratings
Table 9:
Capacitance
Table 10:
Timing and Operating Conditions
Table 11:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Parameter
Voltage on V
Voltage on inputs, NC or I/O pins relative to V
Operating temperature T
Operating temperature T
Storage temperature (plastic)
Parameter
Input capacitance: Address and command
Input capacitance: S#
Input capacitance: CK0
Input capacitance: CK2
Input capacitance: DQMB
Input/output capacitance: DQ
Parameter
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
DD
Absolute Maximum Ratings
Capacitance
Notes 1, 2; notes appear on page 20
AC Functional Characteristics
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 20
, V
DD
Q supply relative to V
OPR
OPR
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
(commercial - ambient)
(industrial - ambient)
SS
SS
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
15
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
t
t
t
t
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
MRD
DQD
DQZ
CCD
DAL
PED
DPL
BDL
CDL
RDL
Symbol
C
C
C
C
C
C
I 3
I 3
IO
I 1
I 2
I 4
b
a
-13E
1
1
1
0
0
2
0
4
2
1
1
2
2
Min
–1.0
–1.0
–40
–55
0
Min
16.2
18.6
Electrical Specifications
2.5
10
-133
5
4
1
1
1
0
0
2
0
5
2
1
1
2
2
©2002 Micron Technology, Inc. All rights reserved.
+150
Max
-10E
+4.6
+4.6
+65
+85
1
1
1
0
0
2
0
4
2
1
1
2
2
Max
15.2
18.2
20.6
7.6
3.8
6
Units
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Units
Units
°C
°C
°C
V
V
Notes
pF
pF
pF
pF
pF
pF
15, 21
16, 21
16, 21
17
14
14
17
17
17
17
17
17
26