MT9HTF6472AY-40ED4 Micron Technology Inc, MT9HTF6472AY-40ED4 Datasheet - Page 2

MODULE DDR2 512MB 240-DIMM

MT9HTF6472AY-40ED4

Manufacturer Part Number
MT9HTF6472AY-40ED4
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT9HTF6472AY-40ED4

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 1:
Table 2:
Table 3:
pdf: 09005aef80e6f860, source: 09005aef80e5b799
HTF9C32_64_128x72AG_1.fm - Rev. C 6/05 EN
Part Number
Refresh Count
Row Addressing
Device Bank Addressing
Device Page Size per Bank
Device Configuration
Column Addressing
Module Rank Addressing
MT9HTF3272AY-667__
MT9HTF3272AY-53E__
MT9HTF3272AY-40E__
MT9HTF6472AY-667__
MT9HTF6472AY-53E__
MT9HTF6472AY-40E__
MT9HTF12872AY-667__
MT9HTF12872AY-53E__
MT9HTF12872AY-40E__
Speed Grade
-667
-53E
-40E
Address Table
Key Timing Parameters
Part Numbers and Timing Parameters
1
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
CL = 3
400
400
Module
Densit
256MB
256MB
256MB
512MB
512MB
512MB
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
revisions. Consult factory for current revision codes. Example: MT9HTF6472AY-40EC2.
1GB
1GB
1GB
Data Rate (MT/s)
CL = 4
Configuration
533
533
400
256Mb (32 Meg x 8)
128 Meg x 72
128 Meg x 72
128 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
256MB
1 (S0#)
1KB
8K
2
CL = 5
667
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
16K (A0–A13)
4 (BA0, BA1)
1K (A0-A9)
t
(ns)
512MB
RCD
1 (S0#)
15
15
15
1KB
8K
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
15
RP
1Gb (128 Meg x 8)
8 (BA0, BA1, BA2)
16K (A0–A13)
1K (A0-A9)
(CL -
1 (S0#)
1GB
1KB
8K
Latency
t
5-5-5
4-4-4
3-3-3
5-5-5
4-4-4
3-3-3
5-5-5
4-4-4
3-3-3
Features
RCD -
(ns)
t
55
55
55
RC
t
RP)

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