SMC04GBFK6E NUMONYX, SMC04GBFK6E Datasheet - Page 23

• Manufacturer Part Number: SMC04GBFK6E
• Description: MEMORY CARD 4GB COMPACT FLASH
• Manufacturer: NUMONYX

Specifications of SMC04GBFK6E

• Memory Size: 4GB
• Memory Type: CompactFLASH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SMCxxxBF
5
5.1
Figure 2.
1. D
the -WE signal must be de-asserted between consecutive cycle operations.
OUT
D0 to D15 (D
signifies data provided by the CompactFlash memory card to the system. The -CE signal or both the -OE signal and
–REG
Address Inputs
–CE2/–CE1
–OE
Command interface
There are two types of bus cycles and timing sequences that occur in the PCMCIA type
interface, direct mapped I/O transfer and memory access. Two types of bus cycles are also
available in true IDE interface type: PIO transfer and multi-word DMA transfer.
Table
write timing parameters.
Figure 8
In order to set the card mode, the -OE (-ATASEL) signal must be set and kept stable before
applying V
mode, -OE(-ATASEL) must be driven High, while it must be driven Low to place the card in
true IDE mode.
Attribute memory read and write
Attribute memory read waveforms
OUT
16,
)
show the read and write timing diagrams.
Table
CC
until the reset phase is completed. To place the card in memory mode or I/O
17,
ten(OE)
tsu(A)
Table
ten(CE)
ta(A)
ta(CE)
Figure
18,
ta(OE)
Table
2,
Figure
19,
Table
VALID
tc(R)
3,
Figure
20,
Table 21
4,
VALID
Figure
and
5,
tv(A)
Table 22
Figure
6,
Command interface
show the read and
Figure 7
tdis(CE)
tdis(OE)
and
AI10080
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