SMC04GBFK6E NUMONYX, SMC04GBFK6E Datasheet - Page 21

MEMORY CARD 4GB COMPACT FLASH

SMC04GBFK6E

Manufacturer Part Number
SMC04GBFK6E
Description
MEMORY CARD 4GB COMPACT FLASH
Manufacturer
NUMONYX
Datasheet

Specifications of SMC04GBFK6E

Memory Size
4GB
Memory Type
CompactFLASH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SMCxxxBF
4.2
4.3
Electrical specification
Table 10
otherwise stated, conditions are:
Table 11
current requirements must not exceed the maximum limit shown.
Table 10.
Table 11.
Current measurement
The current is measured by connecting an amp meter in series with the V
meter should be set to the 2A scale range, and have a fast current probe with an RC filter
with a time constant of 0.1 ms. Current measurements are taken while looping on a data
transfer command with a sector count of 128. Current consumption values for both read and
write commands are not to exceed the maximum average RMS current specified in
Table
Table 14
Table 12.
1. x refers to the characteristics described in
Input power
Voltage on any pin except V
Type
IxU
IxD
IxZ
type 1 input characteristic.
V
V
-40 °C to 85 °C.
3.3 V
5 V
11.
CC
CC
Voltage
±
defines the DC characteristics for the CompactFlash memory card. Unless
shows that the card operates correctly in both the voltage ranges and that the
the output drive type and
= 5 V ± 10%
= 3.3 V ± 5%
Table 12
±
10%
Input leakage current
5%
Pull down resistor
Absolute maximum conditions
Input power
Input leakage current
Pull up resistor
Parameter
shows the input leakage current,
Parameter
Maximum average RMS current
CC
with respect to GND
Symbol
Table 15
RPU1
RPD1
(1)
IL
Table
100
85
13. For example, I1U indicates a pull up resistor with a
the output drive characteristics.
V
V
Conditions
V
V
CC
CC
IL
IH
= GND
= 5.0 V
= 5.0 V
= V
Table 13
CC
Symbol
V
V
CC
Min
− 1
50
50
the input characteristics,
Measurement conditions
− 0.3 V to 6.5 V
− 0.5 V to V
Typ
− 40 + 85 °C
− 40 + 85 °C
Electrical interface
Conditions
CC
Max
500
500
CC
1
supply. The
+ 0.5 V
Units
µA
kΩ
kΩ
21/90

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