LTC3703EGN Linear Technology, LTC3703EGN Datasheet - Page 17

• Manufacturer Part Number: LTC3703EGN
• Description: IC BUCK/BOOST SYNC ADJ 5A 16SSOP
• Manufacturer: Linear Technology
• Type: Step-Down (Buck), Step-Up (Boost)r

Specifications of LTC3703EGN

• Internal Switch(s): No
• Synchronous Rectifier: Yes
• Number Of Outputs: 1
• Voltage - Output: 0.8 ~ 93 V
• Current - Output: 5A
• Frequency - Switching: 100kHz ~ 600kHz
• Voltage - Input: 9.3 ~ 100 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power - Output: -

APPLICATIONS INFORMATION
is above the input supply: V
value of the boost capacitor, C
of the total input capacitance of the topside MOSFET(s).
The reverse breakdown of the external diode, D
greater than V
for the external diode is the reverse recovery and reverse
leakage, either of which may cause excessive reverse cur-
rent to fl ow at full reverse voltage. If the reverse current
times reverse voltage exceeds the maximum allowable
Figure 10c. Secondary Output Loop and V
R1
R2
V
DRV
Figure 10a. V
CC
OPTIONAL V
CONNECTION
10V < V
V
DRV
FCB
GND
CC
CC
LTC3703
+
CC
LTC3703
SEC
BGRTN
1μF
IN(MAX)
< 15V
CC
V
SW
BGRTN
TG
BG
IN
CC
BG1
TG1
SW
V
IN
Generated from 10V < V
. Another important consideration
V
IN
+
V
IN
+
C
BOOST
B
IN
, needs to be 100 times that
L1
C
IN
N
1
= V
12V
T1
IN
12V
CC
OUT
+ V
Connnection
+
< 15V
DRVCC
B
+
+
3703 F10a
, must be
V
10V TO
15V
C
OUT
OUT
3703 F10c
V
1μF
C
V
SEC
OUT
OUT
. The
power dissipation, the diode may be damaged. For best
results, use an ultrafast recovery silicon diode such as
the BAS19.
An internal undervoltage lockout (UVLO) monitors the
voltage on DRV
gate drive voltage. If the DRV
UVLO threshold, the LTC3703 shuts down and the gate
drive outputs remain low.
V
DRV
Figure 10d. Capacitive Charge Pump for V
CC
12V
CC
LTC3703
+
V
DRV
CC
Figure 10b. V
CC
1μF
BGRTN
LTC3703
SW
V
TG
BG
C
IN
IN
CC
BGRTN
+
SW
to ensure that the LTC3703 has suffi cient
V
TG
BG
C
IN
IN
V
IN
+
CC
V
IN
Generated from V
(<40V)
C10
1μF
16V
L1
BAT85
ZHCS400
CC
R17
1M
1%
R17
110k
1%
12V
D2
L1
voltage falls below the
VN2222LL
SW
FB
LT1613
0.22μF
10μH
GND
OUT
LTC3703
L2
CC
SHDN
< 10V
+
(V
V
IN
IN
BAT85
+
BAT85
C
3703 F10d
V
< 40V)
OUT
OUT
17
3703 F10b
C
V
<10V
OUT
OUT
3703fb
C9
4.7μF
6.3V