KA5H0365RYDTU Fairchild Semiconductor, KA5H0365RYDTU Datasheet - Page 7

• Manufacturer Part Number: KA5H0365RYDTU
• Description: IC SWIT PWM CM OVP UVLO HV TO220
• Manufacturer: Fairchild Semiconductor

Specifications of KA5H0365RYDTU

• Frequency Range: 90 ~ 110kHz
• Voltage - Input: 9 ~ 30 V
• Voltage - Output: 650V
• Power (watts): 75W
• Operating Temperature: 25°C ~ 160°C
• Package / Case: TO-220-4 Full Pack (Formed Leads)
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics
(KA5H0380R, KA5M0380R, KA5L0380R)
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 3. On-Resistance vs. Drain Current
1000
10
10
10
900
800
700
600
500
400
300
200
100
-1
1
0
0
8
7
6
5
4
3
2
1
0
10
0
0
Figure 1. Output Characteristics
Top : 15V
Bottom:4.5V
V
8.0V
7.0V
6.0V
5.5V
5.0V
GS
10V
C
C
C
10
oss
iss
rss
0
1
Fig3. On-Resistance vs. Drain Current
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
,Drain Current
Vgs=10V
2
C
C
C
iss
oss
rss
Vgs=20V
= C
= C
= C
10
gs
gd
ds
1
10
@ Notes:
+ C
+ C
1
1. 300
2. T
3
gd
gd
C
µ
= 25
(C
s Pulse Test
ds
o
C
= shorted)
@ Note : Tj=25 ℃
4
(Continued)
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 4. Source-Drain Diode Forward Voltage
0.1
10
10
10
10
10
1
8
6
4
2
0
0.4
-1
1
0
0
2
Figure 2. Thansfer Characteristics
25
150
o
5
C
150
o
C
o
C
4
V
V
DS
SD
V
Q
V
GS
DS
=640V
0.6
G
, Source-Drain Voltage [V]
10
,Total Gate Charge [nC]
=400V
, Gate-Source Voltage [V]
V
DS
-25
=160V
o
C
15
6
25
o
C
0.8
20
@ Notes:
1. V
2. 300
@ Notes:
@ Note : I
1. V
2. 300
DS
µ
= 30 V
GS
8
s Pulse Test
µ
= 0V
s Pulse Test
D
25
=3.0A
KA5X03XX-SERIES
1.0
30
10
7