KA5H0365RYDTU Fairchild Semiconductor, KA5H0365RYDTU Datasheet - Page 5

• Manufacturer Part Number: KA5H0365RYDTU
• Description: IC SWIT PWM CM OVP UVLO HV TO220
• Manufacturer: Fairchild Semiconductor

Specifications of KA5H0365RYDTU

• Frequency Range: 90 ~ 110kHz
• Voltage - Input: 9 ~ 30 V
• Voltage - Output: 650V
• Power (watts): 75W
• Operating Temperature: 25°C ~ 160°C
• Package / Case: TO-220-4 Full Pack (Formed Leads)
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 3. On-Resistance vs. Drain Current
700
600
500
400
300
200
100
0.1
10
0
7
6
5
4
3
2
1
0
1
10
0
0
Figure 1. Output Characteristics
Top :
Bottom:4.5V
V
8.0V
7.0V
6.0V
5.5V
5.0V
GS
15V
10V
C
C
C
oss
iss
rss
1
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
,Drain Current [A]
2
V gs=10V
C
C
C
iss
oss
rss
10
3
1
V gs=20V
= C
= C
= C
@ Notes:
1. 300
2. T
gs
gd
ds
10
+ C
C
+ C
= 25
µ
gd
s Pulse Test
gd
o
(C
@ Note : Tj=25 ℃
C
4
ds
= shorted)
5
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 4. Source-Drain Diode Forward Voltage
0.01
10
0.1
0.1
8
6
4
2
0
10
1
1
0
2
Figure 2. Transfer Characteristics
25
0.4
150
o
C
o
C
150
5
o
C
4
V
V
DS
V
SD
GS
=520V
0.6
, Source-Drain Voltage [V]
V
Q
, Gate-Source Voltage [V]
DS
G
=320V
,Total Gate Charge [nC]
V
-25
DS
o
=130V
10
C
25
o
C
6
0.8
15
@ Notes :
@ Notes:
1. VG S = 0 V
2. 300
1. V
2. 300
DS
8
µ
1.0
µ
= 30V
s Pulse Test
s Pulse Test
@ Note : I
KA5X03XX-SERIES
20
D
=3.0A
1.2
10
25
5