FSDM0365RNB Fairchild Semiconductor, FSDM0365RNB Datasheet - Page 8

• Manufacturer Part Number: FSDM0365RNB
• Description: IC SWIT PWM GREEN CM OVP HV 8DIP
• Manufacturer: Fairchild Semiconductor

Specifications of FSDM0365RNB

• Output Isolation: Isolated
• Frequency Range: 61 ~ 73kHz
• Voltage - Input: 8 ~ 20 V
• Voltage - Output: 650V
• Power (watts): 30W
• Operating Temperature: 25°C ~ 140°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FSDM0365RNB_NL; FSDM0365RNB_NL

FSDL0365RNB, FSDM0365RNB
Typical Performance Characteristics (Sense FET part)
8
700
600
500
400
300
200
100
10
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
-1
Capacitance vs. Drain-Source Voltage
On-Resistance vs. Drain Current
0
1
V
DS
, Drain-Source Voltage [V]
2
10
I
D
0
, Drain Current [A]
C
C
C
oss
rss
iss
3
V
GS
10
10
10
= 20V
-1
1
0
V
GS
Top :
Bottom : 5.5 V
4
= 10V
C
C
C
iss
oss
rss
15.0 V
10.0 V
= C
= C
= C
10
8.0 V
7.0 V
6.5 V
6.0 V
V
5
GS
gs
gd
1
※
ds
+ C
+ C
Note : T
※
Output Characteristics
gd
gd
1. V
2. f = 1 MHz
(C
Note ;
V
ds
GS
10
J
6
= 25 ℃
= shorted)
DS
= 0 V
0
, Drain-Source Voltage [V]
7
10
10
10
12
10
8
6
4
2
0
-1
1
0
0.2
0
10
1
※
Source-Drain Diode Forward Voltage
Gate Charge vs. Gate-Source Voltage
1. 250µ s Pulse Test
2. T
Note :
C
= 25 ℃
0.4
2
150 ℃
V
Q
SD
G
0.6
, Source-Drain Voltage [V]
4
, Total Gate Charge [nC]
25 ℃
V
DS
V
0.8
V
= 520V
6
DS
DS
= 325V
= 130V
1.0
8
※
1. V
2. 250µ s Pulse Test
※
Note :
Note : I
GS
= 0V
1.2
10
D
= 3.0 A
1.4
12