FSQ110 Fairchild Semiconductor, FSQ110 Datasheet - Page 5

• Manufacturer Part Number: FSQ110
• Description: IC SWIT PWM GREEN CM OVP 8DIP
• Manufacturer: Fairchild Semiconductor

Specifications of FSQ110

• Output Isolation: Isolated
• Frequency Range: 92 ~ 108kHz
• Voltage - Input: 9 ~ 20 V
• Voltage - Output: 650V
• Power (watts): 12W
• Operating Temperature: 25°C ~ 140°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• On Resistance (max): 14 Ohms
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Maximum Power Dissipation: 1400 mW
• Mounting Style: Through Hole
• Supply Current: 3 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSQ110 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Electrical Characteristics
T
Notes:
10. These parameters, although guaranteed, are not 100% tested in production.
11. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
12. The ESD level of an existing product can be applied to FSQ110 because it has same ESD protection circuit.
A
V
SenseFET Section
Control Section
Burst-Mode Section
Protection Section
Total Device Section
Symbol
R
V
BUR(HYS)
V
= 25°C unless otherwise specified.
V
V
I
Δf
D
C
C
V
DELAY
V
DS(ON)
t
t
I
C
f
START
t
V
t
T
d(on)
d(off)
t
BURH
I
OSC
STOP
BURL
I
I
DSS
I
CLD
LEB
MAX
S/S
LIM
OVP
OSS
RSS
OP
CH
STR
OSC
FB
ISS
t
t
SD
SD
r
f
Zero-Gate-Voltage Drain Current
Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Switching Frequency
Switching Frequency Variation
Maximum Duty Cycle
UVLO Threshold Voltage
Feedback Source Current
Internal Soft-Start Time
Burst-Mode Voltage
Peak Current Limit
Current Limit Delay Time
Thermal Shutdown Temperature
Shutdown Feedback Voltage
Over-Voltage Protection
Shutdown Delay Current
Leading-Edge Blanking Time
Operating Supply Current (control part only)
Start-Up Charging Current
V
str
Supply Voltage
(10)
Parameter
(10)
(10)
(10)
(10)
(10)
(11)
5
V
V
V
V
V
V
f = 1MHz
V
-25°C ≤ T
Measured at 0.1 x V
V
V
V
V
T
di/dt = 170mA/µs
V
V
V
V
J
DS
GS
DS
GS
GS
GS
DS
FB
FB
FB
FB
FB
CC
CC
CC
= 25°C
= GND
= GND
= GND
= 4V
= 4V
= Max. Rating
= 0.8 Max. Rating
= 325V, I
= 14V
= 0V
= 0V
= 0V
= 0V, T
= 10V, I
= 0V, V
Condition
A
≤ 85°C
C
DS
D
D
= 125°C
= 0.5A
= 25V,
= 1A
DS
Min.
0.60
0.70
100
125
200
0.7
0.5
0.3
5.5
3.5
92
55
18
11
7
1
Typ.
0.70
0.85
162
100
200
600
140
3.8
9.5
0.9
0.6
0.4
6.0
5.0
18
19
14
19
33
42
±5
60
12
10
24
8
3
Max.
0.80
1.00
200
108
±10
300
1.1
0.7
0.5
6.5
6.5
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25
19
65
13
20
9
5
Unit
KHz
mA
mV
mA
mA
μA
ms
μA
pF
°C
ns
ns
ns
%
%
Ω
V
V
V
A
V
V
V