NAND256W3A2BN6E NUMONYX, NAND256W3A2BN6E Datasheet - Page 47

• Manufacturer Part Number: NAND256W3A2BN6E
• Description: IC FLASH 256MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Access Time: 12µs
• Supply Voltage Range: 1.7V To 1.95V, 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Base Number: 256
• Block Size: 16896Byte
• Memory Configuration: 32k X 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 497-5038; 497-5038

NAND128-A, NAND256-A
Figure 29. Page program AC waveform
Figure 30. Block erase AC waveform
RB
CL
AL
I/O
W
R
E
Page Program
Setup Code
I/O
RB
R
CL
AL
W
E
80h
Setup Command
Block Erase
(Write Cycle time)
tWLWL
60h
cycle 1
Add.N
Address Input
(Write Cycle time)
cycle 1
tWLWL
Block Address
Add.
cycle 2
Add.N
Input
cycle 2
tWHBL
Add.
cycle 3
Add.N
Confirm
Code
D0h
tWLWL
N
Block Erase
Data Input
(Erase Busy time)
tBLBH3
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
70h
Read Status Register
Program
Page
SR0
DC and AC parameters
Read Status Register
ai08038c
70h
ai08037b
SR0
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