NAND256W3A2BN6E NUMONYX, NAND256W3A2BN6E Datasheet - Page 26

• Manufacturer Part Number: NAND256W3A2BN6E
• Description: IC FLASH 256MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Access Time: 12µs
• Supply Voltage Range: 1.7V To 1.95V, 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Base Number: 256
• Block Size: 16896Byte
• Memory Configuration: 32k X 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 497-5038; 497-5038

Device operations
Figure 12. Sequential row read operations
Figure 13. Sequential row read block diagrams
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RB
I/O
Block
Block
Read B command, x8 devices
(1st half Page)
(1st half Page)
Command
Read A command, x8 devices
01h/ 50h
code
00h/
Area A
Area A
Address inputs
(Read busy time)
(2nd half Page)
(2nd half Page)
Area B
Area B
tBLBH1
(Spare)
(Spare)
Area C
Area C
Busy
1st page
1st page
2nd page
Nth page
2nd page
Nth page
page output
1st
tBLBH1
Block
Block
Busy
Read C command, x8/x16 devices
Read A command, x16 devices
Area A
page output
(main area)
2nd
tBLBH1
Area A
Area A/ B
Busy
NAND128-A, NAND256-A
(Spare)
Area C
(Spare)
Area C
page output
Nth
1st page
2nd page
Nth page
1st page
Nth page
2nd page
ai07597
AI07598