NAND256W3A2BN6E NUMONYX, NAND256W3A2BN6E Datasheet - Page 40

• Manufacturer Part Number: NAND256W3A2BN6E
• Description: IC FLASH 256MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Access Time: 12µs
• Supply Voltage Range: 1.7V To 1.95V, 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Base Number: 256
• Block Size: 16896Byte
• Memory Configuration: 32k X 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 497-5038; 497-5038

DC and AC parameters
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Table 18.
1. Leakage currents double on stacked devices.
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
(RB)
LI
OL
IH
IL
Operating current
(erase and program lockout)
DC characteristics
Output High voltage level
Standby current (CMOS)
Output Low voltage level
Output Low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
V
Input High voltage
Input Low voltage
DD
Parameter
supply voltage
Sequential
Program
Erase
read
(1)
E=V
V
Test conditions
IN
t
WP = 0 V/V
WP = 0 V/V
I
RLRL
OH
I
E = V
OL
V
= 0 to V
V
IL,
OL
V
E = V
OUT
= −400 µA
DD
= 2.1 mA
I
OUT
minimum
= 0.4 V
–
–
–
–
–
DD
= 0 to
max
IH
-0.2
= 0 mA
DD
,
DD
DD
max
−0.3
Min
2.0
2.4
–
–
–
–
–
–
–
–
–
–
8
–
NAND128-A, NAND256-A
Typ
10
10
10
10
20
10
–
–
–
–
–
–
–
–
–
V
DD
Max
100
±10
±10
0.8
0.4
1.7
20
20
20
50
1
2
-
+0.3
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V