NAND256W3A2BN6E NUMONYX, NAND256W3A2BN6E Datasheet - Page 21

IC FLASH 256MBIT 48TSOP

NAND256W3A2BN6E

Manufacturer Part Number
NAND256W3A2BN6E
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND256W3A2BN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Access Time
12µs
Supply Voltage Range
1.7V To 1.95V, 2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Base Number
256
Block Size
16896Byte
Memory Configuration
32k X 8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
497-5038
497-5038

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NAND128-A, NAND256-A
Table 7.
1. A8 is ’don’t care’ in x16 devices.
2. Any additional address input cycles are ignored.
3. The 01h command is not used in x16 devices.
Table 8.
Cycle
A14 - A26
Bus
Address
A9 - A26
A9 - A13
2
3
1
A0 - A7
nd
st
rd
A8
I/O15
I/O8-
X
X
X
Address insertion, x16 devices
Address definitions
A8 is set Low or High by the 00h or 01h command, and is ’don’t care’ in x16 devices
I/O7
A16
A24
A7
I/O6
A15
A23
A6
I/O5
A14
A22
A5
Column address
Address in block
Block address
(1)(2)(3)
Page address
Definition
I/O4
A13
A21
A4
I/O3
A12
A20
A3
I/O2
A11
A19
A2
Bus operations
I/O1
A10
A18
A1
I/O0
A17
A0
A9
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