MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 77

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Rev. A, Advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/06
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
• Changed the “8” address lines going into the “column address counter/Latch” to “9”
• Changed all references of 13 to 12 and changed the “8” address lines going into the
• Changed the “8” address lines going into the “column address counter/Latch” to “9”
• Deleted “(4 Meg x32 x4 banks)” from the first sentence of the “Functional Descrip-
• Removed the following sentence from the “Mode Register (MR) section: “M12 and
• Added A12 to Figure 6.
• Added notes 2? and 2 to Figure 8.
• Removed Table 5, “CAS Latency.”
• Removed all notes except note 2 and added note 1 to Table 5.
• Removed all text references to the “2n rule.”
• Changed the following items in Table 12: Changed
• Added Table 14 for x32 specifications.
• Changed the following specifications in Table 16: CLK 1.5 (MIN) 4.5 (MAX), Input 2.0
• Added Figure 33.
• Deleted first line of “Solder Ball Material” in Figure 52.
• Changed “Burst Length = 1” in the I
• Added a “Contact factory for availability” note to Figure 6.
• Initial release
in Figure 2.
“column address counter/Latch” to “9” in Figure 3.
in Figure 2.
tion” section.
M13 should be set to zero to prevent the EMR from being programmed.”
8 speed grades, changed
changed
(MIN) 4.5 (MAX), DQs 2.0 (MIN) 6.0 (MAX)
t
HZ(2) from 7/8 to 9ns for -75 and -8 speed grades.
t
CK(2) from 9 tp 10ns for -75 and -8 speed grades, and
77
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 row in Table 13 and Table 14.
256Mb: x16, x32 Mobile SDRAM
t
AC(2) from 7/8 to 9ns for -75 and -
©2006 Micron Technology, Inc. All rights reserved.
Revision History