MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 46

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Table 11:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
AC Characteristics
Parameter
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (8192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on page 52 and 53
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
AC (3)
AC (2)
t
CK (3)
CK (2)
HZ (3)
HZ (2)
t
t
t
t
t
t
t
t
t
CMH
t
t
t
CMS
t
t
OH
t
CKH
RCD
RRD
t
CKS
t
RAS
t
t
XSR
46
t
t
REF
RFC
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
N
Min
67.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.5
7.5
9.6
2.5
1.5
1.5
2.5
1.8
0.3
44
19
80
19
15
80
1
3
3
1
1
1
1
2
-75
120,000
256Mb: x16, x32 Mobile SDRAM
Max
1.2
64
6
8
6
9
Min
2.5
2.5
2.5
2.5
2.5
1.8
0.5
10
48
72
20
80
19
15
80
Electrical Specifications
3
3
1
1
2
1
8
1
1
-8
©2006 Micron Technology, Inc. All rights reserved.
120,000
Max
1.2
64
7
9
7
9
Units
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
Notes
23
23
10
10
25
31
20
9
7