MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 69

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Figure 49:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
BANK
ROW
ROW
Single WRITE – with Auto Precharge
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Notes: 1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
T1
NOP 3
2. 15ns is required between <D
3. WRITE command not allowed or
t CL
See Table 11 on page 46.
T2
NOP 3
t CH
T3
NOP 3
ENABLE AUTO PRECHARGE
t CMS
COLUMN m
t DS
BANK
WRITE
T4
D
IN
t CMH
m
t DH
69
IN
m> and the PRECHARGE command, regardless of frequency.
t WR
t
RAS would be violated.
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
256Mb: x16, x32 Mobile SDRAM
T7
NOP
t RP
©2006 Micron Technology, Inc. All rights reserved.
BANK
ROW
ROW
T8
Timing Diagrams
ACTIVE
T9
NOP
DON’T CARE