MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 57

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Figure 37:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
A10
Auto Refresh Mode
CKE
CLK
DQ
High-Z
Precharge all
active banks
t CKS
t CMS
t AS
SINGLE BANK
PRECHARGE
ALL BANKS
Notes: 1. Each AUTO REFRESH command performs a REFRESH cycle. Back-to-back commands are not
BANK(S)
T0
t AH
t CKH
t CMH
t CK
required.
See Table 11 on page 46.
t RP
T1
NOP
T2
REFRESH
AUTO
t CH
t RFC
NOP
57
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CL
Tn + 1
REFRESH
AUTO
256Mb: x16, x32 Mobile SDRAM
t RFC
DON’T CARE
NOP
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©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
To + 1
ACTIVE
ROW
ROW
BANK
UNDEFINED