MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 60

• Manufacturer Part Number: MT46H8M16LFCF-10 IT
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 38:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Self Refresh Mode
Notes:
2. Device must be in the all banks idle state prior to entering self refresh mode.
3. NOPs or DESELECT are required for
4. AR = AUTO REFRESH command.
COMMAND
1. Clock must be stable before exiting self refresh mode. That is, the clock must be cycling
within specifications by Ta0.
ADDR
CKE
DQS
CK#
DM
CK
DQ
1
1
4
t
t
IS
IS
t
NOP
RP
T0
2
t
t
IH
IH
t
CH
t
CL
t
IS
AR
T1
Enter self refresh mode
60
t
128Mb: 8 Meg x 16 Mobile DDR SDRAM
XSR time with at least two clock pulses.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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Ta0
(1)
t CK
t IS
©2006 Micron Technology, Inc. All rights reserved.
NOP
Ta1
Exit self refresh mode
Timing Diagrams
t XSR
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3
t IS
VALID
VALID
Tb0
DON’T CARE
t IH
Advance