MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 28

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10 IT

Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 16:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
READ-to-PRECHARGE
Notes:
1. D
2. BL = 4 or an interrupted burst of 8.
3. Shown with nominal
4. READ-to-PRECHARGE equals 2 clocks, which allows 2 data pairs of data-out.
5. A READ command with auto precharge enabled, provided
6. PRE = PRECHARGE command; ACT = ACTIVE command.
COMMAND
COMMAND
ADDRESS
ADDRESS
precharge to be performed at x number of clock cycles after the READ command, where x =
BL / 2.
OUT
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
5
5
n = data-out from column n.
Bank a,
Bank a,
READ
Col n
READ
Col n
T0
T0
t
CL = 2
AC,
NOP
NOP
T1
t
T1
DQSCK, and
CL = 3
28
T1n
T1n
128Mb: 8 Meg x 16 Mobile DDR SDRAM
(a or all)
(a or all)
D
Bank a,
Bank a,
OUT
n
T2
PRE
T2
PRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n + 1
T2n
T2n
OUT
D
OUT
n
D
T3
NOP
n + 2
T3
NOP
OUT
DON’T CARE
t
t
RP
RP
D
n + 1
T3n
OUT
T3n
D
n + 3
t
OUT
RAS (MIN) is met, would cause a
D
n + 2
©2006 Micron Technology, Inc. All rights reserved.
T4
T4
NOP
NOP
OUT
TRANSITIONING DATA
D
n + 3
OUT
Bank a,
Operations
Bank a,
T5
T5
Row
ACT
Row
ACT
Advance

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