MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 33

• Manufacturer Part Number: MT46H8M16LFCF-10 IT
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Random WRITE Cycles
Notes:
1. D
2. b' (or x, n, a, g) = the next data-in following D
3. Programmed BL = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
COMMAND
ADDRESS
burst order.
IN
DQS
CK#
DM
DQ
CK
b (or x, n, a, g) = data-in for column b (or x, n, q, g)
WRITE
Bank,
Col b
T0
t
DQSS (NOM)
WRITE
Bank,
Col x
Din
T1
b
33
T1n
D
b'
IN
128Mb: 8 Meg x 16 Mobile DDR SDRAM
WRITE
Bank,
Col n
T2
D
x
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
T2n
D
x'
IN
IN
b (x, n, a, g), according to the programmed
WRITE
Bank,
Col a
T3
D
n
IN
DON’T CARE
T3n
D
n'
IN
WRITE
Bank,
T4
Col g
D
©2006 Micron Technology, Inc. All rights reserved.
a
IN
TRANSITIONING DATA
T4n
D
a'
IN
Operations
T5
D
NOP
g
IN
T5n
D
Advance
g'
IN