LH28F160BJHE-TTL90 Sharp Microelectronics, LH28F160BJHE-TTL90 Datasheet - Page 6

• Manufacturer Part Number: LH28F160BJHE-TTL90
• Description: IC FLASH 16MBIT 90NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160BJHE-TTL90

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: Boot Block FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Other names: 425-1824; LH28F160BJHE-BTL90; LHF16J04

1 INTRODUCTION
This
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4 and 5 describe the memory
organization and functionality. Section 6 covers electrical
specifications.
1.1 Features
Key enhancements of LH28F160BJHE-TTL90 boot block
Flash memory are:
Please note following:
1.2 Product Overview
The LH28F160BJHE-TTL90 is a high-performance 16M-
bit Boot Block Flash memory organized as 1M-word of 16
bits or 2M-byte of 8 bits. The 1M-word/2M-byte of data is
arranged in two 4K-word/8K-byte boot blocks, six 4K-
word/8K-byte parameter blocks and thirty-one 32K-
word/64K-byte main blocks which are individually
erasable, lockable and unlockable in-system. The memory
map is shown in Figure 3.
The dedicated V
when V
A Command User Interface (CUI) serves as the interface
between the system processor and internal operation of the
device. A valid command sequence written to the CUI
initiates device automation. An internal Write State
Machine (WSM) automatically executes the algorithms
and timings necessary for block erase, full chip erase,
word/byte write and lock-bit configuration operations.
sharp
•Single low voltage operation
•Low power consumption
•Enhanced Suspend Capabilities
•Boot Block Architecture
•V
3.6V block erase, full chip erase, word/byte write and
lock-bit configuration operations. The V
transitions to GND is recommended for designs that
switch V
CCWLK
CCW
datasheet
CCW
≤V
has been lowered to 1.0V to support 2.7V-
CCWLK
CCW
off during read operation.
contains
.
pin gives complete data protection
LH28F160BJHE-TTL90
CCW
voltage
LHF16J04
A block erase operation erases one of the device’s 32K-
word/64K-byte blocks typically within 1.2s (3V V
V
V
can be independently erased minimum 100,000 times.
Block erase suspend mode allows system software to
suspend block erase to read or write data from any other
block.
Writing memory data is performed in word/byte
increments of the device’s 32K-word blocks typically
within 33µs (3V V
typically within 31µs (3V V
blocks typically within 36µs (3V V
byte blocks typically within 32µs (3V V
Word/byte write suspend mode enables the system to read
data or execute code from any other flash memory array
location.
Individual block locking uses a combination of bits, thirty-
nine block lock-bits, a permanent lock-bit and WP# pin, to
lock and unlock blocks. Block lock-bits gate block erase,
full chip erase and word/byte write operations, while the
permanent lock-bit gates block lock-bit modification and
locked
operations (Set Block Lock-Bit, Set Permanent Lock-Bit
and Clear Block Lock-Bits commands) set and cleared
lock-bits.
The status register indicates when the WSM’s block erase,
full chip erase, word/byte write or lock-bit configuration
operation is finished.
The RY/BY# output gives an additional indicator of WSM
activity by providing both a hardware signal of status
(versus software polling) and status masking (interrupt
masking for background block erase, for example). Status
polling using RY/BY# minimizes both CPU overhead and
system power consumption. When low, RY/BY# indicates
that the WSM is performing a block erase, full chip erase,
word/byte write or lock-bit configuration. RY/BY#-high Z
indicates that the WSM is ready for a new command,
block erase is suspended (and
inactive), word/byte write is suspended, or the device is in
reset mode.
CCW
CC
, 3V V
), 4K-word/8K-byte blocks typically within 0.6s (3V
block
CCW
) independent of other blocks. Each block
alternation.
CC
, 3V V
CC
CCW
Lock-bit
, 3V V
CC
word/byte write is
), 64K-byte blocks
, 3V V
CC
CCW
, 3V V
configuration
), 4K-word
CCW
Rev. 1.26
CC
CCW
), 8K-
, 3V
).
3