LH28F160BJHE-TTL90 Sharp Microelectronics, LH28F160BJHE-TTL90 Datasheet - Page 17

• Manufacturer Part Number: LH28F160BJHE-TTL90
• Description: IC FLASH 16MBIT 90NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160BJHE-TTL90

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: Boot Block FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Other names: 425-1824; LH28F160BJHE-BTL90; LHF16J04

4.8 Block Erase Suspend Command
The Block Erase Suspend command allows block-erase
interruption to read or word/byte write data in another
block of memory. Once the block erase process starts,
writing the Block Erase Suspend command requests that
the WSM suspend the block erase sequence at a
predetermined point in the algorithm. The device outputs
status register data when read after the Block Erase
Suspend command is written. Polling status register bits
SR.7 and SR.6 can determine when the block erase
operation has been suspended (both will be set to "1").
RY/BY# will also transition to High Z. Specification
t
When Block Erase Suspend command write to the CUI, if
block erase was finished, the device places read array
mode. Therefore, after Block Erase Suspend command
write to the CUI, Read Status Register command (70H)
has to write to CUI, then status register bit SR.6 should be
checked for places the device in suspend mode.
At this point, a Read Array command can be written to
read data from blocks other than that which is suspended.
A Word/Byte Write command sequence can also be issued
during erase suspend to program data in other blocks.
Using the Word/Byte Write Suspend command (see
Section 4.9), a word/byte write operation can also be
suspended. During a word/byte write operation with block
erase suspended, status register bit SR.7 will return to "0"
and the RY/BY# output will transition to V
SR.6 will remain "1" to indicate block erase suspend
status.
The only other valid commands while block erase is
suspended are Read Status Register and Block Erase
Resume. After a Block Erase Resume command is written
to the flash memory, the WSM will continue the block
erase process. Status register bits SR.6 and SR.7 will
automatically clear and RY/BY# will return to V
the Erase Resume command is written, the device
automatically outputs status register data when read (see
Figure 8). V
V
suspended. RP# must also remain at V
remain at V
erase). Block erase cannot resume until word/byte write
operations initiated during block erase suspend have
completed.
If the period of from Block Erase Resume command write
to the CUI till Block Erase Suspend command write to the
CUI be short and done again and again, erase time be
prolonged.
WHRZ2
sharp
CCW
level used for block erase) while block erase is
defines the block erase suspend latency.
IL
CCW
or V
must remain at V
IH
(the same WP# level used for block
CCWH1/2
IH
. WP# must also
OL
. However,
(the same
OL
. After
LHF16J04
4.9 Word/Byte Write Suspend Command
The Word/Byte Write Suspend command allows
word/byte write interruption to read data in other flash
memory locations. Once the word/byte write process
starts, writing the Word/Byte Write Suspend command
requests that the WSM suspend the Word/Byte write
sequence at a predetermined point in the algorithm. The
device continues to output status register data when read
after the Word/Byte Write Suspend command is written.
Polling status register bits SR.7 and SR.2 can determine
when the word/byte write operation has been suspended
(both will be set to "1"). RY/BY# will also transition to
High Z. Specification t
suspend latency.
When Word/Byte Write Suspend command write to the
CUI, if word/byte write was finished, the device places
read array mode. Therefore, after Word/Byte Write
Suspend command write to the CUI, Read Status Register
command (70H) has to write to CUI, then status register
bit SR.2 should be checked for places the device in
suspend mode.
At this point, a Read Array command can be written to
read data from locations other than that which is
suspended. The only other valid commands while
word/byte write is suspended are Read Status Register and
Word/Byte Write Resume. After Word/Byte Write
Resume command is written to the flash memory, the
WSM will continue the word/byte write process. Status
register bits SR.2 and SR.7 will automatically clear and
RY/BY# will return to V
Resume command is written, the device automatically
outputs status register data when read (see Figure 9).
V
used for word/byte write) while in word/byte write
suspend mode. RP# must also remain at V
also remain at V
word/byte write).
If the period of from Word/Byte Write Resume command
write to the CUI till Word/Byte Write Suspend command
write to the CUI be short and done again and again, write
time be prolonged.
CCW
must remain at V
IL
or V
WHRZ1
IH
CCWH1/2
OL
(the same WP# level used for
. After the Word/Byte Write
defines the word/byte write
(the same V
IH
. WP# must
CCW
Rev. 1.26
level
14