N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 62
N25Q128A13BSF40F
Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.N25Q128A13B1240F.pdf
(157 pages)
Specifications of N25Q128A13BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
15 000
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
20 000
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Instructions
9.1.6
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DQ0
DQ0
DQ1
DQ1
C
S
C
S
Mode 3
Mode 2
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out on DQ0 and DQ1. The whole
memory can, therefore, be read with a single Dual Output Fast Read (DOFR) instruction.
When the highest address is reached, the address counter rolls over to 00 0000h, so that
the read sequence can be continued indefinitely.
Figure 14. Dual Output Fast Read instruction sequence
Address bits A<23:11> are “Don’t care
Dual I/O Fast Read
The Dual I/O Fast Read (DIOFR) instruction is very similar to the Dual Output Fast Read
(DOFR), except that the address bits are shifted in on two pins (pin DQ0 and pin DQ1)
instead of only one.
32 33 34
Dummy cycles
0
35
1
36 37 38 39 40 41 42 43 44 45 46
2
Instruction
High Impedance
3
4
MSB
5
6
7
DATA OUT 1
6
4
5
7
2
3
23 22 21
8
0
1
MSB
9 10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6
7
DATA OUT 2
24-bit address
4
5
2
3
3
28 29 30 31
0
1
47
2
MSB
6
7
DATA OUT 3
1
4
5
0
2
3
0
1
©2010 Micron Technology, Inc. All rights reserved.
MSB
6
7
DATA OUT n
4
5
2
3
N25Q128 - 3 V
0
1
MSB
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