N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 100
N25Q128A13BSF40F
Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.N25Q128A13B1240F.pdf
(157 pages)
Specifications of N25Q128A13BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
15 000
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
20 000
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Instructions
9.2.16
9.2.17
100/157
DQ0
DQ1
C
S
is exactly the same as the Write Status Register (WRSR) instruction of the Extended SPI
protocol.
Figure 60. Write Status Register instruction sequence DIO-SPI
Read Lock Register (RDLR)
The Read Lock Register instruction is used to read the lock register content.
Except for the parallelizing of the instruction code, the address and the output data on the
two pins DQ0 and DQ1, the instruction functionality is exactly the same as the Read Lock
Register (RDLR) instruction of the Extended SPI protocol.
Figure 61. Read Lock Register instruction and data-out sequence DIO-SPI
Write to Lock Register (WRLR)
The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock
Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed.
0
Instruction
1
DQ0
DQ1
C
S
2
3
23 21 19 17
22 20 18 16
4
5
6
0
Instruction
7
1
24-Bit Address
15 13 11 9
14 12 10 8
8
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9 10 11
3
Status Register In
7
6
4
5
4
5
Byte
12 13 14 15
7
3
2
6
6
1
5
0
4
7
3
2
1
©2010 Micron Technology, Inc. All rights reserved.
0
12 13 14 15
Lock Register Out
7
6
5
4
3
2
N25Q128 - 3 V
1
0
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