N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 24

• Manufacturer Part Number: N25Q128A13BSF40F
• Description: IC SRL FLASH 128MB NMX 16-SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13BSF40F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Operating features
5.1.5
5.1.6
5.1.7
5.1.8
Note:
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Quad Input Fast Program
The Quad Input Fast Program (QIFP) instruction makes it possible to program up to 256
bytes using 4 input pins at the same time (by changing bits from 1 to 0).
For optimized timings, it is recommended to use the QIFP instruction to program all
consecutive targeted bytes in a single sequence rather than using several QIFP sequences
each containing only a few bytes.
Quad Input Extended Fast Program
The Quad Input Extended Fast Program (QIEFP) instruction is an enhanced version of the
Quad Input Fast Program instruction, allowing parallel input on the 4 input pins, including
the address being sent to the device.
For optimized timings, it is recommended to use the QIEFP instruction to program all
consecutive targeted bytes in a single sequence rather than using several QIEFP
sequences each containing only a few bytes.
Subsector erase, sector erase and bulk erase
The page program (PP) instruction allows bits to be reset from ‘1’ to’0’. In order to do this the
bytes of memory need to be erased to all 1s (FFh).
This can be achieved as follows:
This starts an internal erase cycle (of duration t
be preceded by a write enable (WREN) instruction.
Polling during a write, program or erase cycle
A further improvement in the time to Write Status Register (WRSR), Write Non Volatile
Configuration Register (WRNVCR), POTP, PP, DIFP,DIEFP,QIFP, QIEFP or Erase (SSE,
SE or BE) can be achieved by not waiting for the worst case delay (tW, tWNVCR, tPP, tSSE,
tSE, or tBE). The application program can monitor if the required internal operation is
completed, by polling the dedicated register bits to establish when the previous Write,
Program or Erase cycle is complete.
The information on the memory being in progress for a Program, Erase, or Write instruction
can be checked either on the Write In Progress (WIP) bit of the Status Register or in the
Program/Erase Controller bit of the Flag Status Register.
The Program/Erase Controller bit is the opposite state of the WIP bit in the Status Register.
In the Flag Status Register additional information can be checked, as eventual
Program/Erase failures by mean of the Program or erase Error bits.
a subsector at a time, using the subsector erase (SSE) instruction.
a sector at a time, using the sector erase (SE) instruction;
throughout the entire memory, using the bulk erase (BE) instruction.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SSE
, t
SE
or t
BE
). The erase instruction must
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N25Q128 - 3 V